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ATtiny44 Datasheet(PDF) 170 Page - ATMEL Corporation |
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ATtiny44 Datasheet(HTML) 170 Page - ATMEL Corporation |
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170 / 236 page ![]() 170 8006H–AVR–10/09 ATtiny24/44/84 Figure 19-4. Addressing the Flash which is Organized in Pages Figure 19-5. High-voltage Serial Programming Waveforms 19.7.5 Programming the EEPROM The EEPROM is organized in pages, see Table 20-12 on page 183. When programming the EEPROM, the data is latched into a page buffer. This allows one page of data to be pro- grammed simultaneously. The programming algorithm for the EEPROM Data memory is as follows (refer to Table 19-16 on page 171): 1. Load Command “Write EEPROM”. 2. Load EEPROM Page Buffer. 3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program- ming” cycle to finish. 4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been programmed. 5. End Page Programming by Loading Command “No Operation”. PROGRAM MEMORY WORD ADDRESS WITHIN A PAGE PAGE ADDRESS WITHIN THE FLASH INSTRUCTION WORD PAGE PCWORD[PAGEMSB:0]: 00 01 02 PAGEEND PAGE PCWORD PCPAGE PCMSB PAGEMSB PROGRAM COUNTER MSB MSB MSBLSB LSB LSB 012 3 4567 89 10 SDI PB0 SII PB1 SDO PB2 SCI PB3 |
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