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M58PR256J Datasheet(PDF) 94 Page - STMicroelectronics

No. de pieza M58PR256J
Descripción Electrónicos  256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
PDF  114 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256J Datasheet(HTML) 94 Page - STMicroelectronics

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Common Flash Interface
M58PR256J, M58PR512J
94/114
(P+32)h = 13Ch
03h
"Bank Region 1 (Erase Block Type 1): Page mode and Synchronous
mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+33)h = 13Dh
0Ah
Bank Region 1 (Erase Block Type 1) Programming Region Information
Bit 0-7: Aligned size of Programming Region in bytes
Bit 8-14: Reserved
Bit 15: Legacy Flash Operation (ignore bit 0-7)
Bit 16-23: Control Mode valid size in bytes
Bit 24-31: Reserved
Bit 32-39: Control Mode invalid size in bytes
Bit 40-46: Reserved
Bit 47: Legacy Flash Operation (ignore bit 16-23 and 32-39)
(P+34)h = 13Eh
00h
(P+35)h = 13Fh
10h
(P+36)h = 140h
00h
(P+37)h = 141h
10h
(P+38)h = 142h
00h
1.
The variable P is a pointer which is defined at CFI offset 015h.
2.
Bank Regions. There is one Bank Region, see Tables 35, 36, 37 and 38 in Appendix A.
3.
Applies to M58PR256J.
4.
Applies to M58PR512J.
Table 48.
Extended Flash array bank and erase block region information
Offset (1)
1.
The variable P is a pointer which is defined at CFI offset 015h.
Data
Description
(P+39)h = 143h
01h
Number of Bank Regions within the device(2)
2.
Bank Regions. There is one EFA Bank Region.
Table 47.
Bank and Erase block region 1 information(1) (continued)
Offset
Data
Description



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