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M58PR256J Datasheet(PDF) 89 Page - STMicroelectronics

No. de pieza M58PR256J
Descripción Electrónicos  256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
PDF  114 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256J Datasheet(HTML) 89 Page - STMicroelectronics

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M58PR256J, M58PR512J
Common Flash Interface
89/114
Table 40.
CFI query identification string
Offset
Sub-section Name
Description
Value
000h
0020h
Manufacturer Code
ST
001h
8818h
8819h
Device Code
M58PR256J
M58PR512J
256 Mbits
512 Mbits
002h-
00Fh
reserved
Reserved
010h
0051h
Query Unique ASCII String "QRY"
"Q"
011h
0052h
"R"
012h
0059h
"Y"
013h
0000h
Primary Algorithm Command Set and Control
Interface ID code 16 bit ID code defining a specific
algorithm
014h
0002h
015h
offset = P = 000Ah
Address for Primary Algorithm extended Query table
(see Table 43)
P = 10Ah
016h
0001h
017h
0000h
Alternate Vendor Command Set and Control
Interface ID Code second vendor - specified
algorithm supported
NA
018h
0000h
019h
value = A = 0000h
Address for Alternate Algorithm extended Query
table
NA
01Ah
0000h
Table 41.
CFI query system interface information
Offset
Data
Description
Value
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0006h
Typical time-out per single byte/word program = 2n µs
64µs
020h
000Bh
Typical time-out for Buffer Program = 2n µs
2048µs
021h
000Ah
Typical time-out per individual block erase = 2n ms
1s
022h
0000h
Typical time-out for full chip erase = 2n ms
NA
023h
0002h
Maximum time-out for word program = 2n times typical
256µs
024h
0002h
Maximum time-out for Buffer Program = 2n times typical
8192µs
025h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
026h
0000h
Maximum time-out for chip erase = 2n times typical
NA



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