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M58PR256J Datasheet(PDF) 66 Page - STMicroelectronics

No. de pieza M58PR256J
Descripción Electrónicos  256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
PDF  114 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256J Datasheet(HTML) 66 Page - STMicroelectronics

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Program and erase times and endurance cycles
M58PR256J, M58PR512J
66/114
Erase
EFA Block (4 KWord)
0.4
2.5
s
Main Array Block (128 KWord)
0.9
4
s
Program(3)
Single Cell(4)
Word Program(5)
50
230
µs
Single Word(4)
Word Program(5)
50
230
µs
Buffer Enhanced
Factory
Program(4)
4.2
µs
Buffer (512
Words)
Buffer Program
2.15
4.3
ms
Buffer Enhanced
Factory Program
2.15
ms
Main Block (128
KWords)
Buffer Program
0.55
1.1
s
Buffer Enhanced
Factory Program
0.55
s
EFA Block (4 KWord)
0.2
0.94
s
Program/Erase
Cycles (per Block)
Main Array Block (128 KWords)
100,000
cycles
EFA Block (4 KWords)
100,000
Blank Check
Main Array Block
3.2
ms
1.
TA = –30 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2V.
2.
Values are liable to change with the external system-level overhead (command sequence and Status
Register polling execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
5.
The first Word Program in a Program Region will take 115µs, the subsequent Words will take 50µs to
program.
Table 22.
Program/Erase times and endurance cycles(1) (2) (continued)
Parameter
Condition
Min
Typ
Typical after
100kW/E
Cycles
Max
Unit



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