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M58PR256J Datasheet(PDF) 71 Page - STMicroelectronics

No. de pieza M58PR256J
Descripción Electrónicos  256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
PDF  114 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256J Datasheet(HTML) 71 Page - STMicroelectronics

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M58PR256J, M58PR512J
DC and ac parameters
71/114
IPP3
(3)
VPP supply current (Standby,
Program/Erase Suspend)
VPP ≤VDD
0.2
5
µA
IPP4
VPP supply current (Blank Check)
VPP = VPPH
0.05
0.1
mA
VPP = VPP1
0.05
0.1
mA
1.
All inputs stable.
2.
The DPD current is measured 40µs after entering the Deep Power Down mode.
3.
Sampled only, not 100% tested.
4.
VDD Dual Operation current is the sum of read and program or erase currents.
Table 27.
DC characteristics - voltages
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
VIL
Input low voltage
0
0.4
V
VIH
Input high voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output low voltage
IOL = 100 µA
0.1
V
VOH
Output high voltage
IOH = –100 µA
VDDQ –0.1
V
VPP1
VPP Program voltage-logic
Program, Erase
1.1
1.8
3.3
V
VPPH
VPP Program voltage factory Program, Erase
8.5
9.0
9.5
V
VPPLK
Program or Erase lockout
0.4
V
VLKO
VDD lock voltage
1
V
VRPH
RP pin Extended High
voltage
3.3
V
VLKOQ VDDQ lock voltage
0.9
V
Table 26.
DC characteristics - currents (continued)
Symbol
Parameter
Test condition(1)
Typ
Max
Unit



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