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M58PR256J Datasheet(PDF) 65 Page - STMicroelectronics

No. de pieza M58PR256J
Descripción Electrónicos  256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
PDF  114 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR256J Datasheet(HTML) 65 Page - STMicroelectronics

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M58PR256J, M58PR512J
Program and erase times and endurance cycles
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Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per Block are
shown in Table 22 Exact erase times may change depending on the memory array
condition. The best case is when all the bits in the Block are at ‘0’ (pre-programmed). The
worst case is when all the bits in the Block are at ‘1’ (not preprogrammed). Usually, the
system overhead is negligible with respect to the erase time. In the M58PRxxxJ the
maximum number of Program/Erase cycles depends on the VPP voltage supply used.
Table 22.
Program/Erase times and endurance cycles(1) (2)
Parameter
Condition
Min
Typ
Typical after
100kW/E
Cycles
Max
Unit
Erase
EFA Block (4 KWord)
0.4
2.5
s
Main Array Block 128 KWord)
0.9
4
s
Program(3)
Single Cell(4)
Word Program(5)
50
230
µs
Buffer Program
250
500
µs
Single Word(4)
Word Program(5)
50
230
µs
Buffer Program
250
500
µs
Buffer (512 Words) (Buffer
Program)
2.15
4.3
ms
EFA Block (4 KWord)
0.2
0.94
s
Main Array Block (128 KWord)
(Buffer Program)
0.55
1.1
s
Suspend Latency
Program
20
25
µs
Erase
20
30
µs
Program/Erase
Cycles (per Block)
Main Array Block
100,000
cycles
EFA Block
100,000
Blank Check
Main Array Block
3.2
ms



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