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M29DW128F60NF1F Datasheet(PDF) 78 Page - STMicroelectronics

No. de pieza M29DW128F60NF1F
Descripción Electrónicos  128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
PDF  93 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29DW128F60NF1F Datasheet(HTML) 78 Page - STMicroelectronics

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Table 37.
CFI Query System Interface Information
1.
The values given in the above table are valid for both packages.
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100mV
11.5V
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 10mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2n µs
16µs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
0009h
Typical timeout per individual block erase = 2n ms
512ms
22h
44h
0000h
Typical timeout for full Chip Erase = 2n ms
NA
23h
46h
0005h
Maximum timeout for Byte/Word program = 2n times typical
512µs
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0004h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for Chip Erase = 2n times typical
NA



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