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M29DW128F60NF1F Datasheet(PDF) 53 Page - STMicroelectronics

No. de pieza M29DW128F60NF1F
Descripción Electrónicos  128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
PDF  93 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29DW128F60NF1F Datasheet(HTML) 53 Page - STMicroelectronics

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M29DW128F
10 DC and AC parameters
53/93
Table 24.
Device Capacitance
Table 25.
DC Characteristics
Symbol
Parameter
Test Condition
Min
Max(1)
1.
Sampled only, not 100% tested.
Unit
CIN
Input Capacitance
VIN = 0V
6pF
COUT
Output Capacitance
VOUT = 0V
12
pF
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V
≤VIN ≤VCC
±1
µ
A
ILO
Output Leakage Current
0V
≤VOUT ≤VCC
±1
µ
A
ICC1
(1)
1.
In Dual operations the Supply Current will be the sum of ICC1(read) and ICC3 (program/erase).
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
10
mA
ICC2
Supply Current (Standby)
E = VCC ±0.2V,
RP = VCC ±0.2V
100
µ
A
ICC3
(1)(2)
2.
Sampled only, not 100% tested.
Supply Current (Program/
Erase)
Program/Erase
Controller active
VPP/WP =
VIL or VIH
20
mA
VPP/WP =
VPPH
20
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7VCC
VCC +0.3
V
VPPH
Voltage for VPP/WP Program
Acceleration
VCC = 2.7V ±10%
11.5
12.5
V
IPP
Current for VPP/WP Program
Acceleration
VCC =2.7V ±10%
15
mA
VOL
Output Low Voltage
IOL = 1.8mA
0.45
V
VOH
Output High Voltage
IOH = –100µAVCC –0.4
V
VID
Identification Voltage
11.5
12.5
V
VLKO
Program/Erase Lockout
Supply Voltage
1.8
2.3
V



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