TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

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Disclaimer: Subject to change without notice

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Assembly Notes

Component placement and adhesive attachment assembly notes:

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Vacuum pencils and/or vacuum collets are the preferred method of pick up.

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Air bridges must be avoided during placement.

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The force impact is critical during auto placement.

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Organic attachment (i.e. epoxy) not recommended.

Reflow process assembly notes:

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Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.

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An alloy station or conveyor furnace with reducing atmosphere should be used.

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Do not use any kind of flux.

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Coefficient of thermal expansion matching is critical for long-term reliability.

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Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

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Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.

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Force, time, and ultrasonics are critical bonding parameters.

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Aluminum wire should not be used.

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Devices with small pad sizes should be bonded with 0.0007-inch wire.

Disclaimer

GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed

during handling, assembly and test.

Bias-up Procedure

Bias-down Procedure

4. Apply RF signal.

1. Turn off RF signal.

capacitor dissipation.

Model

TriQuint customers. The model is compatible with the industry’s most popular design software including Agilent ADS

and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free

license before being granted the download.