TGF2953_15 datasheet(5/21 Pages) TRIQUINT

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TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 5 of 21 -

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Thermal and Reliability Information - Pulsed (1)

Parameter

Test Conditions

Value

Units

Thermal Resistance, θJC

PD = 12.6 W, Tbaseplate = 85°C

Pulse: 100uS, 5%

7.52

ºC/W

Channel Temperature, TCH

180

°C

Median Lifetime, TM

1.07E08

Hrs

Thermal Resistance, θJC

PD = 12.6 W, Tbaseplate = 85°C

Pulse: 100uS, 10%

7.74

°C/W

Channel Temperature, TCH

183

°C

Median Lifetime, TM

8.20E07

Hrs

Thermal Resistance, θJC

PD = 12.6 W, Tbaseplate = 85°C

Pulse: 100uS, 20%

8.19

ºC/W

Channel Temperature, TCH

188

°C

Median Lifetime, TM

4.76E07

Hrs

Thermal Resistance, θJC

PD = 12.6 W, Tbaseplate = 85°C

Pulse: 100uS, 50%

9.75

ºC/W

Channel Temperature, TCH

208

°C

Median Lifetime, TM

7.88E06

Hrs

Notes:

1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.

Thermal and Reliability Information - CW (1)

Parameter

Test Conditions

Value

Units

Thermal Resistance, θJC

PD = 5.04 W, Tbaseplate = 85°C

10.7

ºC/W

Channel Temperature, TCH

139

°C

Median Lifetime, TM

9.00E09

Hrs

Thermal Resistance, θJC

PD = 7.56 W, Tbaseplate = 85°C

11.4

°C/W

Channel Temperature, TCH

171

°C

Median Lifetime, TM

2.57E08

Hrs

Thermal Resistance, θJC

PD = 10.08 W, Tbaseplate = 85°C

12.1

ºC/W

Channel Temperature, TCH

207

°C

Median Lifetime, TM

8.44E06

Hrs

Thermal Resistance, θJC

PD = 12.6 W, Tbaseplate = 85°C

12.9

ºC/W

Channel Temperature, TCH

248

°C

Median Lifetime, TM

3.00E05

Hrs

Notes:

Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.

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