TGF2953_15 datasheet(2/21 Pages) TRIQUINT

No. de pieza	TGF2953

Descripción Electrónicos	12 Watt Discrete Power GaN on SiC HEMT

PDF	21 Pages

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Fabricante Electrónico	TRIQUINT [TriQuint Semiconductor]

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TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 2 of 21 -

Disclaimer: Subject to change without notice

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Absolute Maximum Ratings

Parameter

Value

Drain to Gate Voltage (VDG)

100 V

Drain Voltage (VD)

40 V

Gate Voltage Range (VG)

-10 to 0 V

Drain Current (ID)

1.5 A

Gate Current (IG)

-2.52 to 4.2mA

Power Dissipation (PD)

17 W

CW Input Power (PIN) @ 10GHz

34 dBm

Channel Temperature (TCH)

275°C

Mounting Temperature (30 Sec.)

320°C

Storage Temperature

−65 to 150°C

Operation of this device outside the parameter ranges given above

may cause permanent damage. These are stress ratings only, and

functional operation of the device at these conditions is not implied.

Recommended Operating Conditions

Parameter

Value

Drain Voltage Range (VD)

32 V

Drain Quiescent Current (IDQ)

50 mA

Drain Current Under RF Drive ( ID)(1)

820 mA

Pinch-off Gate Voltage (VG)

−3.5 V (Typ.)

Channel Temperature (TCH)

225°C (Max.)

(1)

10% pulses at 3GHz, Power Tuned

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