TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 3 of 21 -

Disclaimer: Subject to change without notice

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RF Characterization – Model Optimum Power Tune

Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.

Parameter

Typical Value

Units

Frequency (F)

1

3

6

10

15

GHz

32

32

32

32

32

V

50

50

50

50

50

mA

41.1

41.2

41.1

41.2

40.8

dBm

63.4

62.2

58.5

53.7

45.0

%

26.8

17.9

14.2

10.0

7.0

dB

96.0

91.3

86.7

69.5

41.3

Ω∙

mm

0.005

0.230

0.304

0.331

0.425

pF/mm

Load Impedance (ZL)

38.1+j0.12

29.1+j14.4

17.3+j17.2

8.92+j12.9

4.38+j7.25

Ω

Source Impedance (ZS)

4.02+j29.6

1.80+j7.03

1.44+j3.00

0.90+j0.00

1.20-j2.41

Ω

Notes:

1. Large signal equivalent output network (normalized).

RF Characterization – Model Optimum Efficiency Tune

Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.

Parameter

Typical Value

Units

Frequency (F)

1

3

6

10

15

GHz

32

32

32

32

32

V

50

50

50

50

50

mA

39.8

39.9

40.0

40.8

40.6

dBm

68.6

67.7

62.8

56.0

47.3

%

28.3

19.4

15.1

10.3

7.9

dB

156.1

151.3

134.7

86.3

52.8

Ω∙

mm

0.320

0.363

0.366

0.355

0.391

pF/mm

Load Impedance (ZL)

56.4+j17.7

29.0+j30.0

12.0+j22.3

7.27+j14.0

4.38+j8.52

Ω

Source Impedance (ZS)

4.02+j29.6

1.80+j7.03

1.44+j3.00

0.90+j0.00

1.20-j2.41

Ω

Notes:

1. Large signal equivalent output network (normalized).