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TGF2953 Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGF2953 Datasheet(HTML) 1 Page - TriQuint Semiconductor |
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1 / 21 page  TGF2953 12 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev A 10-22-14 - 1 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Applications • Marine radar • Satellite communications • Point to point communications • Military communications • Broadband amplifiers • High efficiency amplifiers Product Features • Frequency Range: DC - 12 GHz • 41.2 dBm Nominal PSAT at 3.5 GHz • 73.7% Maximum PAE at 3.5 GHz • 18.2 dB Nominal Power Gain at 3.5 GHz • Bias: VD = 32 V, IDQ = 50 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 1.01 x 1.14 x 0.10 mm Ordering Information Part ECCN Description TGF2953 EAR99 12 Watt GaN HEMT General Description The TriQuint TGF2953 is a discrete 2.52 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2953 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of 18.2 dB at 3.5 GHz. The maximum power added efficiency is 73.7 % which makes the TGF2953 appropriate for high efficiency applications. Lead-free and RoHS compliant. Pad Configuration Pad No. Symbol 1-2 VG / RF IN 3 VD / RF OUT Backside Source / Ground Functional Block Diagram |
Número de pieza similar - TGF2953_15 |
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Descripción similar - TGF2953_15 |
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