TGF2953_15 datasheet(15/21 Pages) TRIQUINT

No. de pieza	TGF2953

Descripción Electrónicos	12 Watt Discrete Power GaN on SiC HEMT

PDF	21 Pages

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Fabricante Electrónico	TRIQUINT [TriQuint Semiconductor]

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TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 15 of 21 -

Disclaimer: Subject to change without notice

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Model Load Pull Contours

Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.

3dB compression performance referenced to maximum large-signal gain.

15GHz, Load-pull

40.5

40.3

40.1

10.3

9.8

9.3

44.4

39.4

34.4

•

Max Power is 40.8dBm

at Z = 4.383+7.249iΩ

Ω

= 0.0377+0.5633i

•

Max Gain is 10.5dB

at Z = 1.77+12.507iΩ

Ω

= 0.3794+0.7945i

•

Max PAE is 47.3%

at Z = 4.381+8.521iΩ

Ω

= 0.1231+0.6035i

Zo = 8Ω

Ω

Zs(fo) = 1.2-2.41iΩ

Ω

Zs(2fo) = 2Ω

Ω

Zs(3fo) = 2Ω

Ω

Zl(2fo) = 49.97Ω

Ω

Zl(3fo) = 21Ω

Ω

Power

Gain

PAE

TGF2953 Datasheet(PDF) 15 Page - TriQuint Semiconductor

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