TGF2953_15 datasheet(13/21 Pages) TRIQUINT

No. de pieza	TGF2953

Descripción Electrónicos	12 Watt Discrete Power GaN on SiC HEMT

PDF	21 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TRIQUINT [TriQuint Semiconductor]

Página de inicio	http://www.triquint.com

Logo

13 / 21 page

TGF2953

12 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev A 10-22-14

- 13 of 21 -

Disclaimer: Subject to change without notice

www.triquint.com

Model Load Pull Contours

Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.

3dB compression performance referenced to maximum large-signal gain.

6GHz, Load-pull

40.9

40.7

40.5

14.9

14.4

13.9

62.5

57.5

52.5

•

Max Power is 41.1dBm

at Z = 17.251+17.159iΩ

Ω

= 0.0859+0.41i

•

Max Gain is 15.3dB

at Z = 6.873+24.51iΩ

Ω

= 0.1502+0.7472i

•

Max PAE is 62.8%

at Z = 12.024+22.285iΩ

Ω

= 0.1261+0.5897i

Zo = 21Ω

Ω

Zs(fo) = 1.44+3iΩ

Ω

Zs(2fo) = 6.1Ω

Ω

Zs(3fo) = 6.1Ω

Ω

Zl(2fo) = 21Ω

Ω

Zl(3fo) = 21Ω

Ω

Power

Gain

PAE

TGF2953 Datasheet(PDF) 13 Page - TriQuint Semiconductor

TGF2953 Datasheet(HTML) 13 Page - TriQuint Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Datasheet Descarga

Enlace URL