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SPC560P50L3 Datasheet(PDF) 59 Page - STMicroelectronics |
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SPC560P50L3 Datasheet(HTML) 59 Page - STMicroelectronics |
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59 / 112 page ![]() SPC560P44Lx, SPC560P50Lx Electrical characteristics Doc ID 14723 Rev 9 59/112 1. C.E. Triplett and B. Joiner, An Experimental Characterization of a 272 PBGA Within an Automotive Engine Controller Module, Proceedings of SemiTherm, San Diego, 1998, pp. 47–54. 2. G. Kromann, S. Shidore, and S. Addison, Thermal Modeling of a PBGA for Air-Cooled Applications, Electronic Packaging and Production, pp. 53–58, March 1998. 3. B. Joiner and V. Adams, Measurement and Simulation of Junction to Board Thermal Resistance and Its Application in Thermal Modeling, Proceedings of SemiTherm, San Diego, 1999, pp. 212–220. 3.6 Electromagnetic interference (EMI) characteristics 3.7 Electrostatic discharge (ESD) characteristics 3.8 Power management electrical characteristics 3.8.1 Voltage regulator electrical characteristics The internal voltage regulator requires an external NPN ballast to be connected as shown in Figure 9. Table 16 contains all approved NPN ballast components. Capacitances should be placed on the board as near as possible to the associated pins. Care should also be taken to limit the serial inductance of the VDD_HV_REG, BCTRL and VDD_LV_CORx pins to less than Table 14. EMI testing specifications Symbol Parameter Conditions Clocks Frequency Level (Max) Unit VEME Radiated emissions Device configuration, test conditions and EM testing per standard IEC61967-2 Supply voltage = 5 V DC Ambient temperature = 25 °C Worst-case orientation fOSC 8MHz fCPU 64 MHz No PLL frequency modulation 150 kHz–150 MHz 16 dBµV 150–1000 MHz 15 IEC Level M — fOSC 8MHz fCPU 64 MHz 1% PLL frequency modulation 150 kHz–150 MHz 15 dBµV 150–1000 MHz 14 IEC Level M — Table 15. ESD ratings(1),(2) Symbol Parameter Conditions Value Unit VESD(HBM) S R Electrostatic discharge (Human Body Model) — 2000 V VESD(CDM) S R Electrostatic discharge (Charged Device Model) — 750 (corners) V 500 (other) 1. All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2. A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. |
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