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LTC2412IGN Datasheet(PDF) 26 Page - Linear Technology |
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LTC2412IGN Datasheet(HTML) 26 Page - Linear Technology |
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26 / 36 page ![]() LTC2412 26 2412f APPLICATIO S I FOR ATIO various values of source resistance imbalance between the IN+ and IN– pins when large CIN values are used. If possible, it is desirable to operate with the input signal common mode voltage very close to the reference signal common mode voltage as is the case in the ratiometric measurement of a symmetric bridge. This configuration eliminates the offset error caused by mismatched source impedances. The magnitude of the dynamic input current depends upon the size of the very stable internal sampling capacitors and upon the accuracy of the converter sampling clock. The accuracy of the internal clock over the entire temperature and power supply range is typical better than 0.5%. Such a specification can also be easily achieved by an external clock. When relatively stable resistors (50ppm/ °C) are used for the external source impedance seen by IN+ and IN–, the expected drift of the dynamic current, offset and gain errors will be insignificant (about 1% of their respec- tive values over the entire temperature and voltage range). Even for the most stringent applications, a one-time calibration operation may be sufficient. In addition to the input sampling charge, the input ESD protection diodes have a temperature dependent leakage current. This current, nominally 1nA ( ±10nA max), results in a small offset shift. A 100 Ω source resistance will create a 0.1 µV typical and 1µV maximum offset voltage. Reference Current In a similar fashion, the LTC2412 samples the differential reference pins REF+ and REF– transfering small amount of charge to and from the external driving circuits thus producing a dynamic reference current. This current does not change the converter offset, but it may degrade the gain and INL performance. The effect of this current can be analyzed in the same two distinct situations. For relatively small values of the external reference capaci- tors (CREF < 0.01µF), the voltage on the sampling capacitor settles almost completely and relatively large values for the source impedance result in only small errors. Such values for CREF will deteriorate the converter offset and gain performance without significant benefits of reference filtering and the user is advised to avoid them. Larger values of reference capacitors (CREF > 0.01µF) may be required as reference filters in certain configurations. Such capacitors will average the reference sampling charge and the external source resistance will see a quasi con- stant reference differential impedance. When FO = LOW (internal oscillator and 60Hz notch), the typical differential reference resistance is 1.3M Ω which will generate a gain error of approximately 0.38ppm at full-scale for each ohm of source resistance driving REF+ or REF–. When FO = HIGH (internal oscillator and 50Hz notch), the typical differential reference resistance is 1.56M Ω which will generate a gain error of approximately 0.32ppm at full- scale for each ohm of source resistance driving REF+ or REF–. When FO is driven by an external oscillator with a frequency fEOSC (external conversion clock operation), the typical differential reference resistance is 0.20 • 1012/ fEOSCΩ and each ohm of source resistance drving REF+ or REF– will result in 2.47 • 10–6 • fEOSCppm gain error at full- scale. The effect of the source resistance on the two reference pins is additive with respect to this gain error. The typical +FS and –FS errors for various combinations of source resistance seen by the REF+ and REF– pins and external capacitance CREF connected to these pins are shown in Figures 18, 19, 20 and 21. Figure 17. Offset Error vs Common Mode Voltage (VINCM = IN+ = IN–) and Input Source Resistance Imbalance ( ∆RIN = RSOURCEIN+ – RSOURCEIN–) for Large CIN Values (CIN ≥ 1µF) VINCM (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2412 F17 120 100 80 60 40 20 0 –20 –40 –60 –80 –100 –120 FO = GND TA = 25°C RSOURCEIN– = 500Ω CIN = 10µF VCC = 5V REF+ = 5V REF – = GND IN+ = IN– = VINCM A: ∆RIN = +400Ω B: ∆RIN = +200Ω C: ∆RIN = +100Ω D: ∆RIN = 0Ω E: ∆RIN = –100Ω F: ∆RIN = –200Ω G: ∆RIN = –400Ω A B C D E F G |
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