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STM32G47PBY6TR Datasheet(PDF) 163 Page - STMicroelectronics

No. de pieza STM32G47PBY6TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY6TR Datasheet(HTML) 163 Page - STMicroelectronics

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DS12712 Rev 3
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STM32G473xB STM32G473xC STM32G473xE
Electrical characteristics
194
5.3.23
Temperature sensor characteristics
5.3.24
VBAT monitoring characteristics
Table 76. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
1. Guaranteed by design.
VTS linearity with temperature
-
±1
±2
°C
Avg_Slope(1)
Average slope
2.3
2.5
2.7
mV/°C
V30
Voltage at 30°C (±5 °C)(2)
2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer
to Table 5: Temperature sensor calibration values.
0.742
0.76
0.785
V
tSTART-RUN(1)
Start-up time in Run mode (start-up of buffer)
-
8
15
µs
tSTART_CONT(3)
3.
Continuous mode means RUN mode or Temperature Sensor ON.
Start-up time when entering in continuous
mode
-
70
120
µs
tS_temp(1)
ADC sampling time when reading the
temperature
5-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD,
when selected by ADC
-4.7
7
µA
Table 77. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-39
-
kΩ
QRatio on VBAT measurement
-
3
-
-
Er(1)
1. Guaranteed by design.
Error on Q
-10
-
10
%
tS_vbat(1)
ADC sampling time when reading the
VBAT
12
-
-
µs
Table 78. VBAT charging characteristics
Symbol
Parameter Conditions
Min
Typ
Max
Unit
RBC
Battery
charging
resistor
VBRS = 0
-
5
-
kΩ
VBRS = 1
-
1.5
-



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