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STM32G47PBY6TR Datasheet(PDF) 83 Page - STMicroelectronics |
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STM32G47PBY6TR Datasheet(HTML) 83 Page - STMicroelectronics |
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83 / 229 page ![]() DS12712 Rev 3 83/229 STM32G473xB STM32G473xC STM32G473xE Electrical characteristics 194 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 18 are derived from tests performed under the ambient temperature condition summarized in Table 17. 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 19 are derived from tests performed under the ambient temperature conditions summarized in Table 17: General operating conditions. Table 18. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ µs/V VDDA fall time rate 10 ∞ Table 19. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 V Falling edge 2.15 2.20 2.25 VPVD2 PVD threshold 2 Rising edge 2.41 2.46 2.51 V Falling edge 2.31 2.36 2.41 VPVD3 PVD threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 |
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