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STM32G47PBY6TR Datasheet(PDF) 156 Page - STMicroelectronics

No. de pieza STM32G47PBY6TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY6TR Datasheet(HTML) 156 Page - STMicroelectronics

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Electrical characteristics
STM32G473xB STM32G473xC STM32G473xE
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DS12712 Rev 3
Figure 31. VREFOUT_TEMP in case VRS = 00
IINRUSH
Control of
maximum DC
current drive on
VREFBUF_
OUT during start-
up phase (7)
--
8
-
mA
IDDA(VREF
BUF)
VREFBUF
consumption from
VDDA
Iload = 0 µA
-
16
25
µA
Iload = 500 µA
-
18
30
Iload = 4 mA
-
35
50
Iload = 6.5 mA
-
45
80
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which follows (VDDA - drop
voltage).
3. Guaranteed by characterization results.
4. Line regulation is given for overall supply variation, in normal mode.
5. Tcoeff_vrefint refer to Tcoeff parameter in the embedded voltage reference section.
6. The capacitive load must include a 100 nF low ESR capacitor in order to cut-off the high frequency noise.
7. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V], [2.8 V to 3.6 V] and [3.135 V to 3.6 V] respectively for VRS=0,1 and 2.
Table 73. VREFBUF characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MSv62522V1
2.025
2.03
2.035
2.04
2.045
2.05
2.055
2.06
-40
-20
0
20
40
60
80
100
120
V
°C
Mean
Min
Max



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