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STM32G47PBY6TR Datasheet(PDF) 113 Page - STMicroelectronics

No. de pieza STM32G47PBY6TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY6TR Datasheet(HTML) 113 Page - STMicroelectronics

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STM32G473xB STM32G473xC STM32G473xE
Electrical characteristics
194
5.3.7
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. However,
the recommended clock input waveform is shown in Figure 19: High-speed external clock
source AC timing diagram.
Table 37. Regulator modes transition times(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tVOST
Regulator transition time from Range
2 to Range 1 or
Range 1 to Range 2(2)
Wakeup clock HSI16 = 16 MHz
with HPRE = 8
20
40
μs
1. Guaranteed by characterization results.
2. Time until VOSF flag is cleared in PWR_SR2.
Table 38. Wakeup time using USART/LPUART(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tWUUSART
tWULPUART
Wakeup time needed to calculate the
maximum USART/LPUART baudrate
allowing to wakeup up from stop mode
when USART/LPUART clock source is
HSI16
Stop 0 mode
-
1.7
μs
Stop 1 mode
-
8.5
1. Guaranteed by design.
Table 39. High-speed external user clock characteristics(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
User external clock
source frequency
Voltage scaling
Range 1
-8
48
MHz
Voltage scaling
Range 2
-8
26
VHSEH
OSC_IN input pin high
level voltage
-
0.7 VDD
-VDD
V
VHSEL
OSC_IN input pin low
level voltage
-VSS
-0.3 VDD
tw(HSEH)
tw(HSEL)
OSC_IN high or low time
Voltage scaling
Range 1
7-
-
ns
Voltage scaling
Range 2
18
-
-



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