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STM32G47PBY6TR Datasheet(PDF) 105 Page - STMicroelectronics

No. de pieza STM32G47PBY6TR
Descripción Electrónicos  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY6TR Datasheet(HTML) 105 Page - STMicroelectronics

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Table 34. Current consumption in VBAT mode
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-
VBAT
25°C
55°C
85°C
105°C
125°C
25°C
55°C
85°C
105°C
125°C
IDD(
VBAT)
Backup domain
supply current
RTC
disabled
1.8 V
4
17
92
245
600
----
-
nA
2.4 V
5
20
105
280
690
----
-
3 V
6
24
125
330
805
----
-
3.6 V
16
54
260
675
1650
----
-
RTC
enabled and
clocked by
LSE
bypassed at
32768 Hz
1.8 V
310
315
350
470
-----
-
2.4 V
435
440
500
665
-----
-
3 V
720
815
1050
1350
-----
-
3.6 V
2150
2600
3400
4050
-----
-
RTC
enabled and
clocked by
LSE
quartz(2)
1.8 V
270
345
455
715
835
----
-
2.4 V
385
455
650
910
910
----
-
3 V
525
600
910
1150
1000
----
-
3.6 V
710
995
1250
1700
1900
----
-
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.



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