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RMLD232UAW Datasheet(PDF) 30 Page - Emerging Memory & Logic Solutions Inc

No. de pieza RMLD232UAW
Descripción Electrónicos  2M x 32 bit Low Power DDR SDRAM
PDF  50 Pages
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Fabricante Electrónico  EMLSI [Emerging Memory & Logic Solutions Inc]
Página de inicio  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

RMLD232UAW Datasheet(HTML) 30 Page - Emerging Memory & Logic Solutions Inc

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30
Rev 0.7
64Mb Low Power DDR SDRAM
Advanced
Absolute maximum ratings
NOTE : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommand operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions (Voltage referenced to VSS=0V, TA=-25 to 85 )
NOTE :
1. Under all conditions, VDDQ must be less than or equal to VDD
2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
Parameter
Symbol
Value
Uint
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 2.7
V
Voltage on VDD supply realtive to VSS
VDD
-0.5 ~ 2.7
V
Voltage on VDD supply realtive to VSS
VDDQ
-0.5 ~ 2.7
V
Storage temperature
TSTG
-55 ~ +150
Operatiing temperature
TA
-25 ~ +85
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal VDD of 1.8V)
VDD
1.7
1.95
V
1
I/O supply voltage
VDDQ
1.7
1.95
V
1
Input logic high voltage
VIH(DC)
0.7 x VDDQ
VDDQ + 0.3
V
2
Input logic low voltage
VIL(DC)
-0.3
0.3 x VDDQ
V
2
Output logic high voltage
VOH(DC)
0.9 x VDDQ
-
V
IOH = -0.1
Output logic low voltage
VOL(DC)
-
0.1 x VDDQ
V
IOL = 0.1
Input leakage current
II
-2
2
Output leakage current
IOZ
-5
5



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