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STGWT40HP65FB Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STGWT40HP65FB
Descripción Electrónicos  Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
PDF  17 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT40HP65FB Datasheet(HTML) 5 Page - STMicroelectronics

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STGWT40HP65FB
Electrical characteristics
DocID028465 Rev 3
5/17
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 5 A, VR = 400 V,
VGE = 15 V (see Figure
28: "Test circuit for
inductive load switching")
di/dt = 1000 A/µs
-
140
ns
Qrr
Reverse recovery charge
-
21
nC
Irrm
Reverse recovery current
-
6.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
430
A/µs
Err
Reverse recovery energy
-
1.6
µJ
trr
Reverse recovery time
IF = 5 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 28: "Test
circuit for inductive load
switching")
di/dt = 1000 A/µs
-
200
ns
Qrr
Reverse recovery charge
-
47.3
nC
Irrm
Reverse recovery current
-
9.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
428
A/µs
Err
Reverse recovery energy
-
3.2
µJ



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