STGWT40HP65FB datasheet(3/17 Pages) STMICROELECTRONICS

No. de pieza	STGWT40HP65FB

Descripción Electrónicos	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

PDF	17 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STGWT40HP65FB

Electrical ratings

DocID028465 Rev 3

3/17

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

160

VGE

Gate-emitter voltage

± 30

IF(2)

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(3)

Pulsed forward current

PTOT

Total dissipation at TC = 25 °C

283

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

- 55 to 175

Notes:

(1)Pulse width limited by maximum junction temperature.

(2)Limited by wires.

(3)Pulsed forward current.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.53

°C/W

RthJC

Thermal resistance junction-case diode

RthJA

Thermal resistance junction-ambient

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