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STGWT40HP65FB Datasheet (PDF) - STMicroelectronics

STGWT40HP65FB Datasheet PDF - STMicroelectronics
No. de pieza STGWT40HP65FB
Descarga  STGWT40HP65FB Descarga
Tamaño del archivo   909.68 Kbytes
Page   17 Pages
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descripción Electrónicos Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

STGWT40HP65FB Datasheet (PDF)

Go To PDF Page Descarga Datasheet
STGWT40HP65FB Datasheet PDF - STMicroelectronics

No. de pieza STGWT40HP65FB
Descarga  STGWT40HP65FB Click to download

Tamaño del archivo   909.68 Kbytes
Page   17 Pages
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descripción Electrónicos Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

STGWT40HP65FB Datasheet (HTML) - STMicroelectronics


STGWT40HP65FB Detalles de producto

Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.




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Descripción similar - STGWT40HP65FB

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Acerca de STMicroelectronics


STMicroelectronics es un fabricante multinacional de electrónica y semiconductores con sede en Ginebra, Suiza.

La compañía ofrece una amplia gama de productos que incluyen microcontroladores, sensores, amplificadores de energía y circuitos integrados para diversas aplicaciones en los mercados automotrices, industriales y de consumo.

Fundada en 1987, Stmicroelectronics tiene operaciones en más de 100 países y es una de las compañías semiconductores más grandes del mundo.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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