STGWT40HP65FB datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STGWT40HP65FB

4/17

DocID028465 Rev 3

Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.6

2.0

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

Forward on-voltage

IF = 5 A

IF = 5 A, TJ = 125 °C

1.85

IF = 5 A, TJ = 175 °C

1.75

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

5412

Coes

Output capacitance

198

Cres

Reverse transfer capacitance

107

Total gate charge

VCC = 520 V, IC = 40 A,

VGE = 15 V (see Figure 29:

"Gate charge test circuit")

210

Qge

Gate-emitter charge

Qgc

Gate-collector charge

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off-delay time

VCE = 400 V, IC = 40 A,

VGE = 15 V, RG = 5

Ω (see

Figure 28: "Test circuit for

inductive load switching")

142

Current fall time

Eoff(1)

Turn-off switching energy

363

µJ

td(off)

Turn-off-delay time

VCE = 400 V, IC = 40 A,

VGE = 15 V, RG = 5

TJ = 175 °C (see Figure 28:

"Test circuit for inductive

load switching")

141

Current fall time

Eoff

Turn-off switching energy

764

µJ

Notes:

(1)Including the tail of the collector current.

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