Products and Product Information are Subject to Change Without Notice.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

1

HMC999

v01.0112

GaN MMIC 10 WATT POWER AMPLIFIER,

0.01 - 10 GHz

General Description

Features

Functional Diagram

The hmC999 is a Gan hemT mmiC Distributed

power Amplifier which operates between 0.01 and 10

Ghz. The amplifier provides 11 dB of gain, 47 dBm

output ip3 and 38 dBm of output power at 1 dB gain

compression while requiring 1100 mA from a +48 V

supply. The hmC999 amplifier provides 10 watts of

bandwidth. All data is taken with the chip connected

via two 0.025 mm (1 mil) wire bonds of minimal length

0.31 mm (12 mils).

high p1dB output power: 38 dBm

high psat output power: 40 dBm

high output ip3: 47 dBm

high Gain: 11 dB

supply Voltage: +28V, +40V or +48V @ 1100 mA

50 ohm matched input/output

Die size: 3.66 x 1.91 x 0.1 mm

Typical Applications

The hmC999 is ideal for:

• Test Instrumentation

• Military Communications

• Jammers and Decoys

• Radar, EW & ECM Subsystems

• Space

[2]

parameter

min.

Typ.

max.

min.

Typ.

max.

min.

Typ.

max.

Units

frequency range

0.01 - 2

2 - 6

6 - 10

Ghz

Gain

10.5

12.5

9

11

8.5

10.5

dB

Gain flatness

±0.8

±0.4

±0.7

dB

Gain Variation over Temperature

0.017

0.02

0.025

dB/ °C

input return loss

20

18

15

dB

output return loss

13

15

14

dB

output power for 1 dB Compression (p1dB)

36.5

38.5

36

38

34.5

36.5

dBm

saturated output power (psat)

40.5

40

39.5

dBm

output Third order intercept (ip3)

48

47

45.5

dBm

supply Current

(idd) (Vdd = 48V, Vgg = 22V Typ.)

1100

1100

1100

mA

* Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical.

[1] S parameter and OIP3 data taken at Idd=1000mA

[2] Probe station chuck temperature adjusted to bring backside of die to +25