Description
The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated
circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts
of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully
matched to 50 Ohm, is housed in a compact, 6-lead metal/ceramic flanged
package (Type: 440219) and offers high power, high gain and superior efficiency.
The CMPA901A035F1 is suitable for long pulse operation and capable of CW
operation.
Features
• 35 W Typical PSAT
• >38% Typical Power Added Efficiency
• 35 dB Large Signal Gain
• High Temperature Operation
Note: Features are typical performance across
frequency under 25°C operation. Please reference
performance charts for additional details.
Applications
• Civil and Military Pulsed
Radar Amplifiers