6

HMC999

v01.0112

GaN MMIC 10 WATT POWER AMPLIFIER,

0.01 - 10 GHz

Products and Product Information are Subject to Change Without Notice.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

Second Harmonics vs. Idd @

Pout = +26 dBm, Vdd = 48V

Second Harmonics vs. Vdd @

Pout = +26 dBm, Idd = 1100 mA

Second Harmonics vs. Pout

Vdd = 48V & Vgg = 22V & Idd = 1100 mA

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

56V

Gate Bias Voltage (Vgg1)

-5 to 0V

Gate Bias Voltage (Vgg2)

6V to (Vdd - 8V)

rf input power @ fin < 0.2Ghz (rfin) 28 dBm

rf input power @ fin > 0.2Ghz (rfin) 36 dBm

Channel Temperature

225 °C

Continuous pdiss (T= 85 °C)

(derate 729 mw/°C above 85 °C)

102 w

1.37 °C/w

output power into Vswr > 7:1

40 dBm

storage Temperature

-65 to 150 °C

operating Temperature

-55 to 85 °C

eleCTrosTATiC sensiTiVe DeViCe

oBserVe hAnDlinG preCAUTions

Vdd (V)

idd (mA)

28

1100

40

1100

48

1100

Typical Supply Current vs. Vdd

0

10

20

30

40

50

60

70

02468

10

12

+14 dBm

+18 dBm

+22 dBm

+26 dBm

+30 dBm

FREQUENCY(GHz)

Second Harmonics vs. Temperature

Vdd = 48V & Vgg = 22V & Idd = 1100 mA

Pout = 26 dBm

0

10

20

30

40

50

60

70

02468

10

12

+25C

+85C

FREQUENCY(GHz)

0

10

20

30

40

50

60

70

02468

10

12

800mA

900mA

1000mA

1100mA

FREQUENCY(GHz)

0

10

20

30

40

50

60

70

02468

10

12

+48V

+40V

+28V

FREQUENCY(GHz)

[1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC