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STX30NM60ND Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STX30NM60ND
Descripción Electrónicos  N-channel 600 V, 0.11 Ω, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
PDF  18 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STX30NM60ND Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STx30NM60ND
4/18
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
dv/dt(1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
VDD= 480 V, ID= 25 A,
VGS= 10 V
48
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 12.5 A
0.11
0.13
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 12.5 A
25
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
2800
200
24
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
125
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 12.5 A
RG =4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
20
50
110
75
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 25 A,
VGS = 10 V,
(see Figure 19)
100
16
54
nC
nC
nC
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
3.0
Ω



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