STX30NM60ND datasheet(1/18 Pages) STMICROELECTRONICS

No. de pieza	STX30NM60ND

Descripción Electrónicos	N-channel 600 V, 0.11 Ω, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

PDF	18 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 18 page

November 2008

Rev 2

1/18

18

STx30NM60ND

N-channel 600 V, 0.11

Ω, 25 A FDmesh™ II Power MOSFET

(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Features

■ The world’s best RDS(on) in TO-220 amongst

the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

■ Switching applications

Description

The FDmesh™ II series belongs to the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company's strip layout

and associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode.

Figure 1.

Internal schematic diagram

It is therefore strongly recommended for bridge

topologies, in particular ZVS phase-shift

converters.

Type

VDSS @TJ

max

RDS(on)

max

ID

STB30NM60ND

STI30NM60ND

STF30NM60ND

STP30NM60ND

STW30NM60ND

650 V

0.13

Ω

25 A

25 A(1)

25 A

1.

Limited only by maximum temperature allowed

1

2

3

1

2

3

TO-220

TO-220FP

1

2

3

I PAK

2

1

3

D PAK

2

1

2

3

TO-247

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB30NM60ND

30NM60ND

D²PAK

Tape and reel

STI30NM60ND

30NM60ND

I²PAK

Tube

STF30NM60ND

30NM60ND

TO-220FP

Tube

STP30NM60ND

30NM60ND

TO-220

Tube

STW30NM60ND

30NM60ND

TO-247

Tube

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STX30NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

STX30NM60ND Datasheet(HTML) 1 Page - STMicroelectronics

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