STX30NM60ND datasheet(3/18 Pages) STMICROELECTRONICS

No. de pieza	STX30NM60ND

Descripción Electrónicos	N-channel 600 V, 0.11 Ω, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

PDF	18 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STx30NM60ND

Electrical ratings

3/18

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D2PAK

I2PAK / TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

25(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

15.8

15.8(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

100

100(1)

PTOT

Total dissipation at TC = 25 °C

190

dv/dt(3)

ISD ≤ 25 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

– 55 to 150

°C

Max. operating junction temperature

150

Table 3.

Thermal data

Symbol

Parameter

TO-220

I²PAK

TO-247 D²PAK TO-220FP Unit

Rthj-case

Thermal resistance

junction-case max

0.66

3.1

°C/W

Rthj-amb

Thermal resistance

junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance

junction-pcb max

°C/W

Maximum lead temperature

for soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

900

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