AP20G02CDF

20V N+P-Channel Enhancement Mode MOSFET

AP20G02CDF REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250μA

-20

-23

-

V

IGSS

Gate-Body Leakage

VDS= 0V, VGS= ±12V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= -20V, VGS= 0V

-

-

-1

μA

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID= -250μA

-0.4

-0.7

-1.2

V

RDS(on)

Drain-Source on-Resistance3

VGS= -4.5V, ID= -4.1A

-

23

35

mΩ

VGS= -2.5V, ID= -3.0A

-

41

57

Ciss

Input Capacitance

VGS = 0V, VDS = -10V,

f= 1MHz

-

751

-

pF

Coss

Output Capacitance

-

97

-

Crss

Reverse Transfer Capacitance

-

80

-

Qg

Total Gate Charge

VGS= -4.5V, VDS= -10V,

ID= -4A

-

9.3

-

nC

Qgs

Gate-Source Charge

-

1

-

Qgd

Gate-Drain Charge

-

2.2

-

td(on)

Turn-on Delay Time

VGS= -4.5V, VDS= -10V,

RG= 3Ω, ID= -4A

-

13

-

ns

tr

Rise time

-

9

-

td(off)

Turn-off Delay Time

-

19

-

tf

Fall Time

-

29

-

VSD

Body Diode Voltage3

IS= -1A, VGS = 0V

-

-

-1

V

IS

Continuous Source Current

-

-

-4.1

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The EAS data shows Max. rating . The test condition is VDD=18V,RG=25Ω VGS=4.5V,L=0.1mH,IAS=18A

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.