AP20G02CDF

20V N+P-Channel Enhancement Mode MOSFET

AP20G02CDF REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

20

23

-

V

IGSS

Gate Leakage Current

VGS = ±12V, VDS = 0V

-

-

±100

nA

IDSS

Drain Cut-off Current

VDS = 20V, VGS = 0V

-

-

1

µA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250µA

0.4

0.7

1.2

V

RDS(on)

Drain-Source On-State Resistance3

VGS = 4.5V, ID =7.6A

-

11

23

mΩ

VGS = 2.5V, ID = 3.5A

-

15

35

Ciss

Input Capacitance

VGS = 0V, VDS = 10V,

f = 1MHz

-

700

-

pF

Coss

Output Capacitance

-

120

-

Crss

Reverse Transfer Capacitance

-

105

-

Qg

Total Gate Charge

VGS= 4.5V, VDS= 10V,

ID= 5A

-

9.6

-

nC

Qgs

Gate-Source Charge

-

1.4

-

Qgd

Gate-Drain Charge

-

2.7

-

td(on)

Turn-On Time

VGS= 4.5V, VDD = 10V, ID =

5A,RG= 3Ω

-

5.5

-

ns

tr

Rise Time

-

1.3

-

td(off)

Turn-Off Time

-

10.4

-

tf

Fall Time

-

4.8

-

VSD

Body Diode Voltage3

IS=4A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

-

-

5

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The EAS data shows Max. rating . The test condition is VDD=18V,RG=25Ω VGS=4.5V,L=0.1mH,IAS=11A

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.