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AP20G02CDF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20G02CDF
Descripción Electrónicos  20V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20G02CDF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G02CDF
20V N+P-Channel Enhancement Mode MOSFET
AP20G02CDF REV1.0
永源微電子科技有限公司
Description
The AP20G02CDF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =20A
RDS(ON) <23mΩ @ VGS=10V （Type：11mΩ）
VDS = -20V ID =-18.8A
RDS(ON) < 35mΩ @ VGS=-10V（Type：23mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G02CDF
PDFN3*3-8L
AP20G02CDF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
20
-20
V
VGS
Gate-Source Voltage
±
12
±
12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
20
-18.8
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
16.2
-15.5
A
IDM
Pulsed Drain Current2
60
-54
A
EAS
Single Pulse Avalanche Energy3
85
78
mJ
PD@TA=25℃
Total Power Dissipation4
3.5
3.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
105
℃
/W
RθJC
Thermal Resistance Junction-Case1
50
℃
/W


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