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M25P05-AVMP6TP Datasheet(PDF) 39 Page - Numonyx B.V

No. de pieza M25P05-AVMP6TP
Descripción Electrónicos  512 Kbit, serial Flash memory, 50 MHz SPI bus interface
PDF  52 Pages
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Fabricante Electrónico  NUMONYX [Numonyx B.V]
Página de inicio  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M25P05-AVMP6TP Datasheet(HTML) 39 Page - Numonyx B.V

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M25P05-A
DC and AC parameters
39/52
Table 13.
DC characteristics
Symbol
Parameter
Test condition (in addition to
those in Table 10.)
Min
Max
Unit
ILI
Input leakage current
± 2
µA
ILO
Output leakage current
± 2
µA
ICC1
Standby current
S = VCC, VIN = VSS or VCC
50
µA
ICC2
Deep power-down current
S = VCC, VIN = VSS or VCC
5µA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 50 MHz,
Q = open
8mA
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
4mA
ICC4
Operating current (PP)
S = VCC
15
mA
ICC5
Operating current (WRSR)
S = VCC
15
mA
ICC6
Operating current (SE)
S = VCC
15
mA
ICC7
Operating current (BE)
S = VCC
15
mA
VIL
Input low voltage
– 0.5
0.3VCC
V
VIH
Input high voltage
0.7VCC VCC+0.4
V
VOL
Output low voltage
IOL = 1.6 mA
0.4
V
VOH
Output high voltage
IOH = –100 µAVCC–0.2
V
Table 14.
Instruction times
Test conditions specified in Table 10 and Table 11.
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
tW
Write status register cycle time
5
15
ms
tPP
(1)
1.
When using the page program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1
≤ n ≤
256).
Page program cycle time (256 bytes)
1.4
5ms
Page program cycle time (n bytes)
0.4+n*1/256(2)
2.
tPP=2µs+8µs*[int(n-1)/2+1]+4µs*[int(n-1)/2]+2µs, only in products with process technology code X and Y.
tSE
Sector erase cycle time
0.65
3
s
tBE
Bulk erase cycle time
0.85
6
s



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