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IS25LE01G-RILA3 Datasheet(PDF) 155 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE01G-RILA3
Descripción Electrónicos  SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  186 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE01G-RILA3 Datasheet(HTML) 155 Page - Integrated Silicon Solution, Inc

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IS25LE01G
IS25WE01G
Integrated Silicon Solution, Inc.- www.issi.com
155
Rev. A6
01/14/2025
8.54 ERASE PPB OPERATION (ERPPB, E4h)
The Erase PPB (ERPPB) command sets all
PPB bits to “1”. Before the ERPPB command can be accepted by the
device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable
Latch (WEL) in the Status Register to enable any write operations.
The instruction code is shifted in by the rising edges of the SCK signal. CE# must be driven high after the eighth
bit of the instruction byte has been latched in. This will initiate the beginning of internal erase cycle, which involves
the pre-programming and erase of the entire PPB memory array. Without CE# being driven high after the eighth
bit of the instruction, the PPB erase operation will not be executed.
With the internal erase cycle in progress, the user can read the value of the Write In Progress (WIP) bit to check if
the operation has been completed. The WIP bit will indicate “1” when the erase cycle is in progress and “0” when
the erase cycle has been completed. When the ERPPB
operation is completed, the WEL is set to “0”. Erase
suspend is not allowed during PPB Erase.
Figure 8.122 Erase PPB Sequence In SPI Mode
Instruction = E4h
CE#
SCK
SI
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SO
High Impedance
Figure 8.123 Erase PPB Sequence In QPI Mode
E4h
CE#
SCK
IO[3:0]
0
1
Mode 3
Mode 0



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