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TMP112DX Datasheet(PDF) 5 Page - Texas Instruments

No. de pieza TMP112DX
Descripción Electrónicos  TMP112x High-Accuracy, Low-Power, Digital Temperature Sensors With SMBus and Two-Wire Serial Interface in SOT563 and X2SON Packages
PDF  46 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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TMP112DX Datasheet(HTML) 5 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
Over free-air temperature range unless otherwise noted(1)
MIN
MAX
UNIT
Supply voltage (V+)
4
V
Voltage at SCL, ADD0, and SDA
–0.5
4
V
Voltage at ALERT
((V+) + 0.3)
and ≤ 4
V
Output current
±10
mA
Operating temperature
–55
150
°C
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–60
150
°C
(1)
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±1000
(1)
JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250- CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
V+
Supply voltage
1.4
3.3
3.6
V
TA
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
THERMAL METRIC(1)
TMP112A/B/D/N
TMP112Dx
UNIT
DRL (SOT563)
DPW (X2SON)
6 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
240.2
230
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
96.4
194
°C/W
RθJB
Junction-to-board thermal resistance
124.3
158.4
°C/W
ψJT
Junction-to-top characterization parameter
4.0
20
°C/W
ψJB
Junction-to-board characterization parameter
123.1
158.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
108.4
°C/W
MT
Thermal Mass
1.97
0.46
mJ/°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
www.ti.com
TMP112, TMP112D
SBOS473L – MARCH 2009 – REVISED JULY 2024
Copyright © 2024 Texas Instruments Incorporated
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5
Product Folder Links: TMP112 TMP112D



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