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BUT12AI Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BUT12AI
Descripción Electrónicos  Silicon Diffused Power Transistor
PDF  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUT12AI Datasheet(HTML) 3 Page - NXP Semiconductors

  BUT12AI Datasheet HTML 1Page - NXP Semiconductors BUT12AI Datasheet HTML 2Page - NXP Semiconductors BUT12AI Datasheet HTML 3Page - NXP Semiconductors BUT12AI Datasheet HTML 4Page - NXP Semiconductors BUT12AI Datasheet HTML 5Page - NXP Semiconductors BUT12AI Datasheet HTML 6Page - NXP Semiconductors BUT12AI Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
V
CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
R
B and RL calculated from ICon and IBon requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC = 300 V; -VBE = 5 V;LB = 1 uH
Fig.6. Switching times waveforms with inductive load.
Fig.7. Test circuit RBSOA. V
CC = 150 V; -VBB = 5 V
L
C = 200 µH; VCL ≤ 850 V; LB = 1 µH
Fig.8. Normalised power dissipation.
PD% = 100
⋅PD/PD
25˚C = f (Tmb)
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
LB
IBon
-VBB
LC
T.U.T.
VCC
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
June 1997
3
Rev 1.000



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