Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT12AI

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

3.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

10

mA

V

CEOsust

Collector-emitter sustaining voltage

I

450

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltages I

-

-

1.5

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.3

V

h

FE

DC current gain

I

10

18

35

h

FE

I

14

20

35

h

FEsat

I

5.8

10

12.5

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

t

on

Turn-on time

-

1.0

µs

t

s

Turn-off storage time

-

4.0

µs

t

f

Turn-off fall time

-

0.8

µs

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

1.9

2.5

µs

t

f

Turn-off fall time

150

300

ns

Fig.1. Test circuit for V

Fig.2. Oscilloscope display for V

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

300R

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

1 Measured with half sine-wave voltage (curve tracer).

June 1997

2

Rev 1.000