Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT12AI

GENERAL DESCRIPTION

Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited

for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

20

A

P

tot

Total power dissipation

T

-

110

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.5

V

I

Csat

Collector saturation current

5

-

A

t

f

Inductive fall time

I

300

ns

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

20

A

I

B

Base current (DC)

-

4

A

I

BM

Base current peak value

-

6

A

P

tot

Total power dissipation

T

-

110

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

with heatsink compound

-

1.15

K/W

R

th j-a

Junction to ambient

in free air

-

60

K/W

12 3

tab

b

c

e

June 1997

1

Rev 1.000