BUT12AI datasheet(5/7 Pages) PHILIPS

No. de pieza	BUT12AI

Descripción Electrónicos	Silicon Diffused Power Transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT12AI

Fig.13. Forward bias safe operating area. T

mb = 25˚C

Region of permissible DC operation.

Extension for repetitive pulse operation.

NB:

Mounted with heatsink compound and

± 5 newton force on the centre of the

envelope.

Fig.14. Reverse bias safe operating area. T

j ≤ Tj max

Fig.15. Typical DC current gain. hFE = f(IC)

parameter VCE

Fig.16. Transient thermal impedance.

th j-mb = f(t); parameter D = tp/T

100

0.1

0.01

100

1000

IC / A

VCE / V

ICMmax

ICmax

0.01

100

0.1

h FE

IC / A

Tj = 25 C

Tj = 125 C

BUX100

1E-05

1E-03

1E-01

1E+01

t / s

Zth / (K/W)

1E+01

1E+00

1E-01

1E-02

D=0

0.5

0.2

0.1

0.05

0.02

D =

200

400

600

800

1000

IC / A

VCE / V

June 1997

Rev 1.000

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