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PHPT610035NK Datasheet(PDF) 9 Page - Nexperia B.V. All rights reserved |
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PHPT610035NK Datasheet(HTML) 9 Page - Nexperia B.V. All rights reserved |
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9 / 14 page ![]() Nexperia PHPT610035NK NPN/NPN high power double bipolar transistor 11. Test information 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 12. BISS transistor switching time definition RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC Fig. 13. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT610035NK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 9 / 14 |
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