Nexperia

PHPT610035NK

NPN/NPN high power double bipolar transistor

aaa-010263

IC (mA)

10-1

104

103

1

102

10

10-2

10-1

1

10

VCEsat

(V)

10-3

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 8. Collector-emitter saturation voltage as a

function of collector current; typical values

aaa-010264

IC (mA)

10-1

104

103

1

102

10

10-2

10-1

1

10

VCEsat

(V)

10-3

(1)

(3)

(2)

Tamb = 25 °C

(1) IC/IB = 50

(2) IC/IB = 20

(3) IC/IB = 10

Fig. 9. Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

10-1

104

103

1

102

10

aaa-010266

1

10-1

102

10

103

RCEsat

(Ω)

10-2

(1)

(1)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 10. Collector-emitter saturation resistance as a

function of collector current; typical values

IC (mA)

10-1

104

103

1

102

10

aaa-010268

1

10-1

102

10

103

RCEsat

(Ω)

10-2

(1)

(3)

(2)

Tamb = 25 °C

(1) IC/IB = 50

(2) IC/IB = 20

(3) IC/IB = 10

Fig. 11. TR1 (NPN): Collector-emitter saturation

resistance as a function of collector current;

typical values

PHPT610035NK

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2020. All rights reserved

Product data sheet

10 September 2020

8 / 14