Nexperia

PHPT610035NK

NPN/NPN high power double bipolar transistor

aaa-010261

200

100

300

400

hFE

0

IC (mA)

10-1

104

103

1

102

10

(1)

(3)

(2)

VCE = 10 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

VCE (V)

0

5

4

2

3

1

aaa-010267

1

2

3

IC

(A)

0

40

35

45

20

25

30

15

10

5

IB = 50 mA

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

aaa-010262

0.8

0.4

0.6

0.2

1.0

1.2

1.4

VBE

(V)

0

IC (mA)

10-1

104

103

1

102

10

(1)

(3)

(2)

VCE = 2 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

aaa-010265

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10-1

104

103

1

102

10

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. Base-emitter saturation voltage as a function of

collector current; typical values

PHPT610035NK

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Product data sheet

10 September 2020

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