Nexperia

PHPT610035NK

NPN/NPN high power double bipolar transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

[1]

-

-

150

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[2]

-

-

62.5

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

6

K/W

Per device

[1]

-

-

120

K/W

[2]

-

-

50

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[3]

-

-

30

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

aaa-014342

10

1

102

103

Zth(j-a)

(K/W)

10-1

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, standard footprint

Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PHPT610035NK

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Product data sheet

10 September 2020

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