Electrical characteristics

STP3LN80K5, STU3LN80K5

4/15

DocID027716 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

800

V

IDSS

Zero gate voltage

drain current

VDS = 800 V, VGS = 0 V

1

µA

VDS = 800 V, VGS = 0 V,

TC = 125 °C(1)

50

µA

IGSS

Gate body leakage

current

VGS = ± 20 V, VGS = 0 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 1 A

2.75

3.25

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

102

-

pF

Coss

Output capacitance

-

11

-

pF

Crss

Reverse transfer capacitance

-

0.1

-

pF

Cotr(1)

Equivalent capacitance time

related

VDS = 0 to 640 V, VGS = 0 V

-

20

-

pF

Coer(2)

Equivalent capacitance

energy related

-

7

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

12

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 2 A,

VGS = 10 V ( see Figure 17:

"Test circuit for gate charge

behavior" )

-

2.63

-

nC

Qgs

Gate-source charge

-

0.91

-

nC

Qgd

Gate-drain charge

-

1.53

-

nC

Notes:

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS

increases from 0 to 80% VDSS