STP3LN80K5, STU3LN80K5

Electrical ratings

DocID027716 Rev 2

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

2

A

ID

Drain current (continuous) at TC = 100 °C

1.25

A

ID(1)

Drain current (pulsed)

8

A

PTOT

Total dissipation at TC = 25 °C

45

W

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 2 A, di/dt ≤ 100 A/µs; VDSpeak < V(BR)DSS, VDD = 640 V.

(3)VDS ≤ 640 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220

IPAK

Rthj-case

Thermal resistance junction-case

2.78

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

100

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

0.7

A

EAS

Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)

155

mJ