STP3LN80K5 datasheet(1/15 Pages) STMICROELECTRONICS

No. de pieza	STP3LN80K5

Descripción Electrónicos	N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages

PDF	15 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 15 page

June 2016

DocID027716 Rev 2

1/15

This is information on a product in full production.

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STP3LN80K5, STU3LN80K5

N-

channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5

Power MOSFET in TO-220 and IPAK packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

V DS

RDS(on) max

ID

STP3LN80K5

800 V

3.25 Ω

2 A

STU3LN80K5



Industry’s lowest RDS(on) x area



Industry’s best FoM (figure of merit)



Ultra-low gate charge



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STP3LN80K5

3LN80K5

TO-220

Tube

STU3LN80K5

IPAK

3

2

1

TAB

IPAK

1

2

3

TAB

TO-220

D(2, TAB)

G(1)

S(3)

AM01476v1

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STP3LN80K5 Datasheet(PDF) 1 Page - STMicroelectronics

STP3LN80K5 Datasheet(HTML) 1 Page - STMicroelectronics

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